AD-PAARRAY3552R-SL

RF Front-end GaN Power Amplifier Biasing, Protection, and Control Reference Design

Overview

The AD-PAARRAY3552R-SL reference design provides biasing control and protection of Gallium Nitride (GaN) and Gallium Arsenide (GaAs) power amplifier (PA). Designed for massive multiple input - multiple output (MIMO) and macro base station RF front-end applications.

The system automatically manages the biasing sequence of GaN power amplifiers while continuously monitoring crucial parameters such voltages, currents, and temperatures.

The core of this solution is the AD3552R high-speed, dual-channel, 16-bit DAC, which supports ultrafast sub-µs voltage settling time of GaN gates.

It also features the LTC7000, a high-side NMOS static switch driver that adeptly handles key fault events such as overvoltage, overcurrent, and overtemperature.

The on-board MAX32666 ultralow power Arm Cortex-M4 microcontroller oversees the biasing sequence, sensor management, and user interface. The firmware can be effortlessly updated via SWD, UART-bootloader, facilitating rapid prototyping and development.

The AD-PAARRAY3552R-SL is a compact, user-friendly, microcontroller-controlled system designed to bias GaN PAs automatically and, to monitor the gate voltage, drain current, drain voltage, and transistor temperature.

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Figure 1 AD-PAARRAY3552R-SL Board

Features

  • Designed to cover full Tx signal chains with integrated MCU and user-friendly GUI for faster and easier evaluation

  • Supports fault event protection: overvoltage (OV), overcurrent (OC), and overtemperature (OT)

  • Robust GaN/GaAs power amplifier biasing at any power-up/power-down sequence

  • Supports ultrafast sub-µs GaN gate voltage switching ~ (<1 µs)

  • Supports ultrafast fault event protection from detection up to gate pinch-off (<10 µs)

  • Wide range of gate bias voltages from -10 V to +10 V

  • Wide range of drain bias voltage from +38 V to +55 V (adjustable)

  • Configurable power-up and power-down sequence

  • Can accommodate from two to four GaN/GaAs Power Amplifiers

  • Real-time monitoring of voltages, currents, and temperature.

Applications

  • 5G massive MIMOs

  • Macro base stations

  • Testing and Automation

System Architecture

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Figure 2 AD-PAARRAY3552R-SL System Block Diagram

Specifications

Features

Drain Voltage Range

+38 V to +55 V (can be adjusted from +4.5 V to +60 V)

Gate Voltage Range

-10 V to +10 V

Drain Current

40 A

Gate Current

±1.6 mA

Gate Voltage Ripple

2 mV (p-p)

Rise Time

738 ns (@10nF load)

Fall Time

< 1us (@10nF load)

Fault Event

Overvoltage

+55 V (can be adjusted from +4.5 V to +55 V)

Overcurrent

3.5 A (can be adjusted from 1.3 A to 5 A)

Overtemperature

+75°C

Computing Resources

CPU

MAX32666 Low-Power Arm Cortex-M4 with FPU-Based Microcontroller with Bluetooth 5 for Wearables

Memory

1 MB SRAM

Storage

64 MB QSPI Flash

User Interface & Control

Communication

UART

Debugging

SWD

Power Supply

External

+48 V DC with higher current capabilities

Operating Conditions

Operating temperature

-45°C to +75°C

Package Contents

  • 1 x AD-PAARRAY3552R-SL board

  • 4 x Standoffs

  • 4 x Screws

The solution also comes with a pre-programmed firmware allowing the system to interface with a PC application for a system configuration, control, and data acquisition through serial interface.

To update the firmware on the on-board MCU, the user needs to purchase the MAX32625 PICO Evaluation Kit separately.

User Guides

Visit the AD-PAARRAY3552R-SL Software User Guide page to learn how to install the firmware and use the application GUI

For comprehensive details on hardware configuration, design files, and usage instructions for the AD-PAARRAY3552R-SL, refer to the AD-PAARRAY3552R-SL Hardware User Guide.

Further Help

For questions and more information about this product, connect with us through the Analog Devices Engineer Zone.